MOSFET P-CH 20V 40A PPAK1212-8S
(45-1828.3C90.001.105)
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 3.6mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 1.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 225 nC @ 10 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 6600 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 4.8W (Ta), 57W (Tc) |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8S (3.3x3.3) |
包/箱: | PowerPAK® 1212-8S |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRL1404ZLRochester Electronics |
MOSFET N-CH 40V 160A TO262 |
|
SI8457DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 12V 4MICRO FOOT |
|
FQA11N90-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 11.4A TO3PN |
|
C3M0015065KWolfspeed - a Cree company |
SICFET N-CH 650V 120A TO247-4L |
|
NVMFS5C645NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A 5DFN |
|
SIHFR220-GE3Vishay / Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
|
PMZ600UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFH5215TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 5A/27A PQFN |
|
2SK1420Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA6N80Rochester Electronics |
MOSFET N-CH 800V 6.3A TO3P |
|
SI4126DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 39A 8SO |
|
2SK1526-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS8690Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 14A 8SOIC |