类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 5.9mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 133 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 17.46 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 349W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRFS8408TRRRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQB6N25TMRochester Electronics |
MOSFET N-CH 250V 5.5A D2PAK |
|
IPP60R520C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NTE2935NTE Electronics, Inc. |
MOSFET N-CH 500V 6.2A TO3PML |
|
XPN3R804NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 40A 8TSON |
|
FQI4N20TURochester Electronics |
MOSFET N-CH 200V 3.6A I2PAK |
|
IXTT1N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1A TO268 |
|
PMV28UNEARNexperia |
MOSFET N-CH 20V 4.7A TO236AB |
|
SIUD401ED-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 500MA PPAK 0806 |
|
IXFN300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A SOT227B |
|
2SK1838L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIZ14GPBFVishay / Siliconix |
MOSFET N-CH 60V 8A TO220-3 |