English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 1.8Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 410 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP086N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220-3 |
|
RJK0651DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK |
|
IRFS4115TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 150V 105A D2PAK |
|
TP90H050WSTransphorm |
GANFET N-CH 900V 34A TO247-3 |
|
RQ3E120BNTBROHM Semiconductor |
MOSFET N-CH 30V 12A 8HSMT |
|
IXFH120N25TWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO247AD |
|
G2R1000MT33JGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7 |
|
HUFA76429D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
SI7454DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
STP40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220AB |
|
SFT1350-TL-HRochester Electronics |
MOSFET P-CH 40V 19A TP-FA |
|
FDS4080N7Rochester Electronics |
MOSFET N-CH 40V 13A 8SO |
|
SFT1458-TL-HRochester Electronics |
MOSFET N-CH 600V 1A DPAK/TP-FA |
