类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 600mOhm @ 1.2A, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 6.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 152.7 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-SOT223-4 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF520PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
AUIRF4905STRLIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
SI7820DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 1.7A PPAK1212-8 |
|
IRF3205STRRPBFRochester Electronics |
MOSFET N-CH 55V 110A D2PAK |
|
SI7315DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |
|
SFT1443-HRochester Electronics |
SFT1443-H |
|
RM5N650LDRectron USA |
MOSFET N-CHANNEL 650V 5A TO252-2 |
|
AUIRFS3004TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK-3 |
|
AO4441Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 4A 8SOIC |
|
SI7454DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
BSZ088N03MSGRochester Electronics |
BSZ088N03 - 12V-300V N-CHANNEL P |
|
DMP3068LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.8A TSOT26 T&R |
|
RSS095N05FU6TBROHM Semiconductor |
MOSFET N-CH 45V 9.5A 8SOP |