类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 3.2mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 220 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 15160 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 375W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3PN |
包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSW2N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOB600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO263 |
|
R6015KNJTLROHM Semiconductor |
MOSFET N-CH 600V 15A LPTS |
|
FDD6637Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 35V 13A/55A DPAK |
|
IPI100N04S4H2AKSA1Rochester Electronics |
MOSFET N-CH 40V 100A TO262-3 |
|
IRF1407LPBFRochester Electronics |
MOSFET N-CH 75V 100A TO262 |
|
STD45NF75T4STMicroelectronics |
MOSFET N-CH 75V 40A DPAK |
|
WPH4003-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1700V 2.5A TO3PF |
|
NVC6S5A444NLZT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
2N7002MTFRochester Electronics |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SIR184DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 20.7A/73A PPAK |
|
IPP60R160P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A TO220-3 |
|
IRFBG20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |