English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 6.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 37.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1050 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 184W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LPTS |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD6637Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 35V 13A/55A DPAK |
|
IPI100N04S4H2AKSA1Rochester Electronics |
MOSFET N-CH 40V 100A TO262-3 |
|
IRF1407LPBFRochester Electronics |
MOSFET N-CH 75V 100A TO262 |
|
STD45NF75T4STMicroelectronics |
MOSFET N-CH 75V 40A DPAK |
|
WPH4003-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1700V 2.5A TO3PF |
|
NVC6S5A444NLZT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
2N7002MTFRochester Electronics |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SIR184DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 20.7A/73A PPAK |
|
IPP60R160P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A TO220-3 |
|
IRFBG20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
STF10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220FP |
|
NP82N04NLG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO262 |
|
IMZA65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
