类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1700 V |
电流 - 连续漏极 (id) @ 25°c: | 2.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 10.5Ohm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 48 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 850 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta), 55W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3PF |
包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVC6S5A444NLZT2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
2N7002MTFRochester Electronics |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SIR184DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 20.7A/73A PPAK |
|
IPP60R160P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A TO220-3 |
|
IRFBG20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
STF10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220FP |
|
NP82N04NLG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO262 |
|
IMZA65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFD9120Rochester Electronics |
MOSFET P-CH 100V 1A 4DIP |
|
NTD4804N-1GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
SI3465DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3A 6TSOP |
|
IPD60R2K0C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.4A TO252-3 |
|
SCTH40N120G2V7AGSTMicroelectronics |
SICFET N-CH 650V 33A H2PAK-7 |