类型 | 描述 |
---|---|
系列: | CoolMOS™ P6 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 23.8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 160mOhm @ 9A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 750µA |
栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2080 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 176W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFBG20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
STF10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220FP |
|
NP82N04NLG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO262 |
|
IMZA65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFD9120Rochester Electronics |
MOSFET P-CH 100V 1A 4DIP |
|
NTD4804N-1GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
SI3465DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3A 6TSOP |
|
IPD60R2K0C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 2.4A TO252-3 |
|
SCTH40N120G2V7AGSTMicroelectronics |
SICFET N-CH 650V 33A H2PAK-7 |
|
FDD6N50FTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK |
|
FDBL0110N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 300A 8HPSOF |
|
MTD2N50E1Rochester Electronics |
TRANS MOSFET N-CH 500V 2A RAIL |
|
NDP7060Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220-3 |