RES 76.8 OHM 1/2W 1% AXIAL
MOSFET N-CH 600V 160MA TO92-3
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 160mA (Tj) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 20Ohm @ 100mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 2mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 150 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-92-3 |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIRC04DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
BSC014N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A/100A TDSON7 |
|
TSM60N900CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4.5A TO252 |
|
STP9NK70ZFPSTMicroelectronics |
MOSFET N-CH 700V 7.5A TO220FP |
|
STD10NM60NDSTMicroelectronics |
MOSFET N-CH 600V 8A DPAK |
|
IRLS3813TRLPBFRochester Electronics |
IRLS3813 - 12V-300V N-CHANNEL PO |
|
NTD4815NHT4GRochester Electronics |
MOSFET N-CH 30V 6.9A/35A DPAK |
|
2SK4146-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM055N03EPQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 80A 8PDFN |
|
RMW280N03TBROHM Semiconductor |
MOSFET N-CH 30V 28A 8PSOP |
|
IRLR3636PBFRochester Electronics |
MOSFET N-CH 60V 50A DPAK |
|
TSM900N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 11A TO252 |
|
IXTK88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO264 |