类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 4.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 85mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1140 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 3.75W (Tc) |
工作温度: | -55°C ~ 175°C (TA) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MCU10N10-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 9.6A DPAK |
|
SPP06N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS7437-7PPBFRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
SIHD7N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 7A DPAK |
|
AO4443Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 6A 8SOIC |
|
BSC030N04NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 23A/100A TDSON |
|
IXTQ60N20L2Wickmann / Littelfuse |
MOSFET N-CH 200V 60A TO3P |
|
PMV48XP,215Nexperia |
MOSFET P-CH 20V 3.5A TO236AB |
|
SCT3120AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 21A TO263-7 |
|
SIHA6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A TO220 |
|
AO7417Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.9A SC70-6 |
|
STP85NF55STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
SPB04N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 4.5A TO263-3-2 |