English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 770mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 5.25V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 8.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 330 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.23W (Ta), 40W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FM |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM60NB260CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 13A ITO220AB |
|
STH290N4F6-6AGSTMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-6 |
|
IRF9620PBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 3.5A TO220AB |
|
IAUC100N08S5N031ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON-8-34 |
|
DN3135N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 135MA TO243AA |
|
SSR2N60BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF11N60DM2STMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
DMTH4004SCTBQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO263AB |
|
IXFH340N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 340A TO247AD |
|
IPZ60R070P6FKSA1Rochester Electronics |
PFET, 600V, 0.07OHM, 1-ELEMENT, |
|
PSMN2R2-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
FQD30N06TFRochester Electronics |
MOSFET N-CH 60V 22.7A DPAK |
|
AUIRFR120ZTRLRochester Electronics |
MOSFET N-CH 100V 8.7A DPAK |
