MOSFET N-CH 600V 3.5A TO220-3
IC SUPERVISOR 1 CHANNEL SOT25
GW JTLPS1.EM-JMKK-A737-1-150-R33
LED DURIS E 2835 SMD
XTAL OSC XO 600.0000MHZ CML SMD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 2.1A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 40W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TPN14006NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 60V 13A 8TSON-ADV |
|
IPD65R600E6TRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL60B216IR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
IPI65R150CFDXKSA1Rochester Electronics |
MOSFET N-CH 650V 22.4A TO262-3 |
|
NVF2955T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.6A SOT223 |
|
STL70N4LLF5STMicroelectronics |
MOSFET N-CH 40V 70A POWERFLAT |
|
SIHJ10N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 10A PPAK SO-8 |
|
IXFT24N80PWickmann / Littelfuse |
MOSFET N-CH 800V 24A TO268 |
|
FDB6030BLRochester Electronics |
MOSFET N-CH 30V 40A R-6 |
|
SI1442DH-T1-BE3Vishay / Siliconix |
MOSFET N-CH 12V 4A SC70-6 |
|
DMP3013SFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 12A PWRDI3333 |
|
R8008ANXROHM Semiconductor |
MOSFET N-CH 800V 8A TO220FM |
|
FKI06190Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 30A TO220F |