English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDPF12N35Rochester Electronics |
MOSFET N-CH 350V 12A TO220F |
|
PSMN1R1-30PL,127Nexperia |
MOSFET N-CH 30V 120A TO220AB |
|
PXN6R7-30QLJNexperia |
PXN6R7-30QL/SOT8002/MLPAK33 |
|
IPD65R250E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCA76N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO3PN |
|
SQD40N06-14L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A TO252AA |
|
BUK9230-100B,118Nexperia |
MOSFET N-CH 100V 47A DPAK |
|
IRLML2030TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 2.7A SOT23 |
|
FDS4465Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 13.5A 8SOIC |
|
IRL530STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 15A D2PAK |
|
STL90N3LLH6STMicroelectronics |
MOSFET N-CH 30V 90A POWERFLAT |
|
TBB1005EMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
FQPF7N20Rochester Electronics |
MOSFET N-CH 200V 4.8A TO220F |
