English
简体中文
MOSFET N-CH 800V 2.5A DPAK
SN62/PB36/AG2 1 LB. BAR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH5™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.5 nC @ 10 V |
| vgs (最大值): | 30V |
| 输入电容 (ciss) (max) @ vds: | 130 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRLR3636TRLRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
AON6756Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 47A/36A 8DFN |
|
DMG2305UX-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23 |
|
TP2104N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 175MA TO92-3 |
|
FDC634PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.5A SUPERSOT6 |
|
PMV74EPERNexperia |
MOSFET P-CH 30V 2.8A TO236AB |
|
IPA65R660CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 700V 6A TO220 |
|
DMT3004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 21A PWRDI5060 |
|
STD5NM60-1STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
BUK7Y7R6-40E/C4115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM2308Rectron USA |
MOSFET N-CHANNEL 60V 3A SOT23 |
|
MSC090SMA070BRoving Networks / Microchip Technology |
SICFET N-CH 700V TO247-3 |
|
BUK9Y153-100E,115Nexperia |
MOSFET N-CH 100V 9.4A LFPAK56 |