MOSFET N-CH 1000V 1.6A TO252
CBL ASSY SMA PLUG RG316 DS 4.9'
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1000 V |
电流 - 连续漏极 (id) @ 25°c: | 1.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 10Ohm @ 800mA, 0V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 27 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 645 pF @ 25 V |
场效应管特征: | Depletion Mode |
功耗(最大值): | 100W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF540PBFVishay / Siliconix |
MOSFET N-CH 100V 28A TO220AB |
|
NVMFS5832NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A 5DFN |
|
VN2450N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 200MA TO92-3 |
|
FDP047N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A TO220-3 |
|
DMT6015LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
AOB66920LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 22.5A/80A TO263 |
|
IXFN56N90PWickmann / Littelfuse |
MOSFET N-CH 900V 56A SOT-227B |
|
SPP04N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN3R0-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDB4030LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ1A070ZPTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
SFT1431-TL-WRochester Electronics |
MOSFET N-CH 35V 11A DPAK/TP-FA |
|
IPL65R130C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A 4VSON |