English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 135mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 6.5V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 375 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 23000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1000W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227B |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPP04N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN3R0-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDB4030LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ1A070ZPTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
SFT1431-TL-WRochester Electronics |
MOSFET N-CH 35V 11A DPAK/TP-FA |
|
IPL65R130C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A 4VSON |
|
DMN2990UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 510MA 3DFN |
|
IXFN100N50PWickmann / Littelfuse |
MOSFET N-CH 500V 90A SOT-227B |
|
SIHG24N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
HUF75639S3Rochester Electronics |
MOSFET N-CH 100V 56A I2PAK |
|
AOB12N50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 12A TO263 |
|
APT6010JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A ISOTOP |
|
TSM301K12CQ RFGTSC (Taiwan Semiconductor) |
MOSFET P-CH 20V 4.5A 6TDFN |
