类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RQ1A070ZPTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
SFT1431-TL-WRochester Electronics |
MOSFET N-CH 35V 11A DPAK/TP-FA |
|
IPL65R130C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 15A 4VSON |
|
DMN2990UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 510MA 3DFN |
|
IXFN100N50PWickmann / Littelfuse |
MOSFET N-CH 500V 90A SOT-227B |
|
SIHG24N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
HUF75639S3Rochester Electronics |
MOSFET N-CH 100V 56A I2PAK |
|
AOB12N50LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 12A TO263 |
|
APT6010JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A ISOTOP |
|
TSM301K12CQ RFGTSC (Taiwan Semiconductor) |
MOSFET P-CH 20V 4.5A 6TDFN |
|
IPD90N10S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
UPA1724G-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6606Rochester Electronics |
MOSFET N-CH 30V 75A DPAK |