







MOSFET P-CH 20V 2.2A 6UDFN
CONN RCPT 30P IDC 30-32AWG GOLD
PDU 3-PHASE SWITCHED 208V 8.6KW
SENSOR 500PSI 1/4-18NPT 4-20MA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 85mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.5 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 450 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 600mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-UDFN (1.6x1.6) |
| 包/箱: | 6-PowerUFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
FQT13N06LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.8A SOT223-4 |
|
|
APT14M100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A TO247 |
|
|
IRF9Z24NPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 12A TO220AB |
|
|
IPN50R3K0CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 2.6A SOT223 |
|
|
SFS9614Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
SI2323DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
|
|
SISS27DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK 1212-8S |
|
|
RQ3E075ATTBROHM Semiconductor |
MOSFET P-CHANNEL 30V 18A 8HSMT |
|
|
R6007JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 7A LPTS |
|
|
SIHG30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AC |
|
|
BUK7Y22-100E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
MSC750SMA170SRoving Networks / Microchip Technology |
TRANS SJT 1700V D3PAK |
|
|
FDP6676Rochester Electronics |
N-CHANNEL POWER MOSFET |