RES 111K OHM 0.5% 1/10W 0603
MOSFET P-CH 20V 700MA DFN1006-3
8D 24C 12#16 12#12 SKT J/N
IC REG LINEAR 3.9V 200MA 4USP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 700mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 300mOhm @ 1.4A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 100 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 400mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN1006-3 |
包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCP099N60ERochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDMC86262PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2A/8.4A 8MLP |
|
IPT020N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 31A/260A 8HSOF |
|
SIHJ7N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7.9A PPAK SO-8 |
|
IRF830ASTRLPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
|
SFR9224TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDFS2P106ASanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A 8SOIC |
|
IRF740ALPBFVishay / Siliconix |
MOSFET N-CH 400V 10A I2PAK |
|
STF19NF20STMicroelectronics |
MOSFET N-CH 200V 15A TO220FP |
|
APT14F100SRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 14A D3PAK |
|
DMN6040SFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.3A 6UDFN |
|
NX2301PVLNexperia |
MOSFET P-CHANNEL 20V 2A TO236AB |
|
SI7104DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8 |