English
简体中文
CAP CER 2700PF 63V C0G/NP0 1825
ELEMENT, NCHANNEL, SILICON, MOSF
COAX 75 OHM RG11 14AWG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 139 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9.8 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 338W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT20M120JCU2Roving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A SOT227 |
|
NTMFS4C56NT1GRochester Electronics |
MOSFET N-CH 30V 69A 5DFN |
|
ATP104-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 75A ATPAK |
|
STD7N90K5STMicroelectronics |
MOSFET N-CH 900V 7A DPAK |
|
BUK762R6-60E,118Nexperia |
MOSFET N-CH 60V 120A D2PAK |
|
AOTF280A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 14A TO220F |
|
IRL530NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
NTD85N02RT4Rochester Electronics |
MOSFET N-CH 24V 12A/85A DPAK |
|
IXTP2N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 2A TO220AB |
|
IRF7665S2TRPBFRochester Electronics |
MOSFET NCH 100V 4.1/14.4A DIRECT |
|
IPB04N03LAGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
R8005ANJFRGTLROHM Semiconductor |
MOSFET N-CH 800V 5A LPTS |
|
IPZ65R045C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 46A TO247 |