English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 530mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 510 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BTS115AE6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
ZVN4310AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 900MA TO92-3 |
|
NX3008PBKW,115Nexperia |
MOSFET P-CH 30V 200MA SOT323 |
|
NVTFS4C13NTAGRochester Electronics |
N-FET 30V, 40A |
|
NDD60N550U1-1GRochester Electronics |
MOSFET N-CH 600V 8.2A IPAK |
|
ZVN4525E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 250V 230MA SOT-23-6 |
|
TPCA8052-H(T2L1,VMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 20A 8SOP |
|
IRFB18N50KVishay / Siliconix |
MOSFET N-CH 500V 17A TO220AB |
|
BSZ0589NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 17A TSDSON |
|
FDP047N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 164A TO220-3 |
|
IPL65R230C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A 4VSON |
|
SPD03N50C3ATMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
AOWF11N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 11A TO262F |
