MOSFET N-CHANNEL 900V 9A TO220
RELAY REED HV SPST-NC 200W 3A 24
GW P9LR32.EM-PPPR-XX56-1-600-R18
LED DURIS S8 WARM WHT 3500K
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 900 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.4Ohm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 72 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2470 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 89W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK7Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7A IPAK |
|
IRLR8256TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 81A DPAK |
|
TK3R1P04PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 40V 58A DPAK |
|
R8010ANXROHM Semiconductor |
MOSFET N-CH 800V 10A TO220FM |
|
NTD4858N-1GRochester Electronics |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
IRFH7191TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 15A/80A PQFN |
|
APT30M19JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 130A ISOTOP |
|
IXFN80N50PWickmann / Littelfuse |
MOSFET N-CH 500V 66A SOT227B |
|
STL45P3LLH6STMicroelectronics |
MOSFET P-CH 30V 45A POWERFLAT |
|
IXTP12N65X2MWickmann / Littelfuse |
MOSFET N-CH 650V 12A TO220 |
|
X97813760Rochester Electronics |
SMALL SIGNAL MOSFET |
|
NTD5C446NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A DPAK |
|
RMD1N25ES9Rectron USA |
MOSFET N-CHANNEL 25V 1.1A SOT363 |