CAP ALUM 1000UF 20% 200V SNAP
CRYSTAL 12.0000MHZ 20PF SMD
XTAL OSC XO 26.0MHZ 1.8V SMD
MOSFET N-CH 800V 9A TO247-3
类型 | 描述 |
---|---|
系列: | SuperMESH™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 900mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 72 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2180 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 160W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IXFN70N60Q2Wickmann / Littelfuse |
MOSFET N-CH 600V 70A SOT-227B |
![]() |
STH130N8F7-2STMicroelectronics |
MOSFET N-CH 80V 110A H2PAK-2 |
![]() |
IPI051N15N5AKSA1Rochester Electronics |
IPI051N15 - 12V-300V N-CHANNEL P |
![]() |
RM150N100ADFRectron USA |
MOSFET N-CHANNEL 100V 128A 8DFN |
![]() |
STP13NM60NSTMicroelectronics |
MOSFET N-CH 600V 11A TO220-3 |
![]() |
AUIRFR5410Rochester Electronics |
MOSFET P-CH 100V 13A DPAK |
![]() |
FDB0165N807LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 310A TO263-7 |
![]() |
DMN2320UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1A X2-DFN1006-3 |
![]() |
IRL530NSPBFRochester Electronics |
HEXFET POWER MOSFET |
![]() |
FDC640PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.5A SUPERSOT6 |
![]() |
BSC100N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 11.4/90A 8TDSON |
![]() |
SIDR626DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 42.8A/100A PPAK |
![]() |
BUZ101LRochester Electronics |
N-CHANNEL POWER MOSFET |