类型 | 描述 |
---|---|
系列: | DeepGATE™, STripFET™ VI |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 84A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.8mOhm @ 38.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 74.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4295 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 136W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQAF8N80Rochester Electronics |
MOSFET N-CH 800V 5.9A TO3PF |
|
PMF63UNEXNexperia |
MOSFET N-CH 20V 2.2A SOT323 |
|
FQPF13N50C-ONRochester Electronics |
MOSFET N-CH 500V 13A TO220-3 |
|
IPP60R380E6XKSA1Rochester Electronics |
IPP60R380 - COOLMOS N-CHANNEL |
|
IRFD9010PBFVishay / Siliconix |
MOSFET P-CH 50V 1.1A 4DIP |
|
BUK753R1-40B,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
IPU50R950CEAKMA2Rochester Electronics |
MOSFET N-CH 500V 4.3A TO251-3 |
|
AUIRF3710ZSTRRRochester Electronics |
MOSFET N-CH 100V 59A D2PAK |
|
IRF7465PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
FDBL0210N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 240A 8HPSOF |
|
IPZA60R099P7XKSA1Rochester Electronics |
MOSFET N-CH 600V 31A TO247-4 |
|
TPS1101DTexas Instruments |
MOSFET P-CH 15V 2.3A 8SOIC |
|
FQU9N25TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A IPAK |