English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.8mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 2.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 770 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA76609D3STRochester Electronics |
MOSFET N-CH 100V 10A TO252AA |
|
IPD068P03L3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 70A TO252-3 |
|
IAUT300N10S5N015ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 300A 8HSOF |
|
DMN2044UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.3A U-WLB1010-4 |
|
APT5015BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
R6504ENJTLROHM Semiconductor |
MOSFET N-CH 650V 4A LPTS |
|
IPA60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
AO4421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 6.2A 8SOIC |
|
BUK7604-40A,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IPB70N10S3L12ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
G6N02L |
MOSFET N-CH 20V 6A SOT-23-3L |
|
RSD150N06TLROHM Semiconductor |
MOSFET N-CH 60V 15A CPT3 |
|
BUK7613-60E,118Nexperia |
MOSFET N-CH 60V 58A D2PAK |
