English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 40mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 47 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 720mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-WLB1010-4 |
| 包/箱: | 4-UFBGA, WLBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT5015BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 32A TO247 |
|
R6504ENJTLROHM Semiconductor |
MOSFET N-CH 650V 4A LPTS |
|
IPA60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
AO4421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 6.2A 8SOIC |
|
BUK7604-40A,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
IPB70N10S3L12ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
G6N02L |
MOSFET N-CH 20V 6A SOT-23-3L |
|
RSD150N06TLROHM Semiconductor |
MOSFET N-CH 60V 15A CPT3 |
|
BUK7613-60E,118Nexperia |
MOSFET N-CH 60V 58A D2PAK |
|
VP3203N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 30V 650MA TO92-3 |
|
RM3401YRectron USA |
MOSFET P-CHANNEL 30V 4.2A SOT23 |
|
SQJ418EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 100V 48A PPAK SO-8 |
|
NTR1P02LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.3A SOT23-3 |
