English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 19mOhm @ 9.2A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.9W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB15N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 15A D2PAK |
|
SIHH21N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |
|
APT11F80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 12A TO247 |
|
RM90N30LDRectron USA |
MOSFET N-CHANNEL 30V 90A TO252-2 |
|
IPU50R950CERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC8588DCRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
UPA2755GR-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFX120N30TWickmann / Littelfuse |
MOSFET N-CH 300V 120A PLUS247-3 |
|
AOTS21313CAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 7.3A 6TSOP |
|
IPP45N06S4L08AKSA1Rochester Electronics |
MOSFET N-CH 60V 45A TO220-3 |
|
IPS60R600PFD7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO251-3 |
|
SIJA54DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STW23N80K5STMicroelectronics |
MOSFET N-CH 800V 16A TO247 |
