MOSFET N-CH 80V 120A TO220-3
DIODE GEN PURP 400V 1A SMAE
SFERNICE FIXED RESISTORS
SWITCH TOGGLE SPDT 5A 125V
类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 3.3mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 144 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10965 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 263W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RQ5C025TPTLROHM Semiconductor |
MOSFET P-CH 20V 2.5A TSMT3 |
|
IRFS4229TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 45A D2PAK |
|
NTR3C21NZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.6A SOT23-3 |
|
NTD3813N-35GRochester Electronics |
MOSFET N-CH 16V 9.6A/51A IPAK |
|
FDT86244Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2.8A SOT223-4 |
|
BUK9516-55A,127Rochester Electronics |
PFET, 66A I(D), 55V, 0.017OHM, 1 |
|
BSC016N03LSGRochester Electronics |
BSC016N03 - 12V-300V N-CHANNEL P |
|
NTLUS4C12NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 6UDFN |
|
SIHU5N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO251 |
|
VN0106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
FDMC86248Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 3.4A POWER33 |
|
SPP16N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PHB47NQ10T,118Nexperia |
MOSFET N-CH 100V 47A D2PAK |