RES 2.7 OHM 5% 3/4W 2010 SMD
MOSFET P-CH 60V 19A TO252
DIODE SCHOTTKY 80V 10A TO277A
DIODE SCHOTTKY 30V 500MA SOD323
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 60mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1710 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.7W (Ta), 46W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTJS3151PT2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 2.7A SC88/SC70-6 |
|
APT20M34BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 74A TO247 |
|
SI5457DC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 6A 1206-8 |
|
SI7862ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 16V 18A PPAK SO-8 |
|
IPN60R600P7SATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 600V 6A SOT223 |
|
STL75NH3LLSTMicroelectronics |
MOSFET N-CH 30V 75A POWERFLAT |
|
RCJ100N25TLROHM Semiconductor |
MOSFET N-CH 250V 10A LPT |
|
IRFB4229PBFRochester Electronics |
IRFB4229 - 12V-300V N-CHANNEL PO |
|
SIR167DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
FDMC2D8N025SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 124A POWER33 |
|
NTGD4169FT1GRochester Electronics |
MOSFET N-CH 30V 2.6A 6TSOP |
|
ZXMP4A16KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 6.6A TO252-3 |
|
SMBF1006LT1Rochester Electronics |
SS SOT23 JFET NPN SPCL |