类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPL60R199CPAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.4A 4VSON |
|
BSC035N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 21A/100A TDSON |
|
NTTFS5C453NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A/107A 8WDFN |
|
FDMS86252Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8PQFN |
|
APT1001RBVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 11A TO247 |
|
RQ1A070APTRROHM Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
|
CMS61P06CT-HFComchip Technology |
MOSFET P-CH 60V 61A TO220AB |
|
IRF40H210Rochester Electronics |
MOSFET N-CH 40V 100A 8PQFN |
|
NTB150N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A D2PAK-3 |
|
FDMS8558SDCRochester Electronics |
MOSFET N-CH 25V 38A/90A 8PQFN |
|
IRFR024NPBFRochester Electronics |
MOSFET N-CH 55V 17A DPAK |
|
IRFIB6N60APBFVishay / Siliconix |
MOSFET N-CH 600V 5.5A TO220-3 |
|
AUIRF1404STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |