English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 750mOhm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 49 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF1404STRLIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
NTMFS5C468NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
SIHB21N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 21A D2PAK |
|
STP14NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 13.5A TO220FP |
|
AUIRLS4030IR (Infineon Technologies) |
MOSFET N-CH 100V 180A D2PAK |
|
BTS247ZE3062AATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO263-5 |
|
STFW6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A ISOWATT |
|
IXFK140N20PWickmann / Littelfuse |
MOSFET N-CH 200V 140A TO264AA |
|
STFU10NK60ZSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
IRFB260NPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 56A TO220AB |
|
IRFB3006PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
RFD3055SM9ARochester Electronics |
MOSFET N-CH 60V 12A TO252AA |
|
FDI8441Rochester Electronics |
MOSFET N-CH 40V 26A/80A I2PAK |
