English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.7 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 370 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RM150N60HDRectron USA |
MOSFET N-CH 60V 150A TO263-2 |
|
2N7002LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
STW19NM50NSTMicroelectronics |
MOSFET N-CH 500V 14A TO247-3 |
|
IRFB4610PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 73A TO220AB |
|
FDFM2P110Rochester Electronics |
MOSFET P-CH 20V 3.5A MICROFET |
|
HUFA75329D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
IPB80N04S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3-2 |
|
FDZ208PRochester Electronics |
MOSFET P-CH 30V 12.5A 30BGA |
|
BSO051N03MS GIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8DSO |
|
RTE002P02TLROHM Semiconductor |
MOSFET P-CH 20V 200MA EMT3 |
|
SPP08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SPD09P06PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO252-3 |
|
IRFR3410PBFRochester Electronics |
MOSFET N-CH 100V 31A DPAK |
