English
简体中文
RES 167 OHM 1% 1/8W 0805
MOSFET P-CH 20V 3.5A MICROFET
BNC STRAIGHT JACK TO HD-BNC STRA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 140mOhm @ 3.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 280 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | MicroFET 3x3mm |
| 包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA75329D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
IPB80N04S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO263-3-2 |
|
FDZ208PRochester Electronics |
MOSFET P-CH 30V 12.5A 30BGA |
|
BSO051N03MS GIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8DSO |
|
RTE002P02TLROHM Semiconductor |
MOSFET P-CH 20V 200MA EMT3 |
|
SPP08N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SPD09P06PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO252-3 |
|
IRFR3410PBFRochester Electronics |
MOSFET N-CH 100V 31A DPAK |
|
IRFH5053TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.3A/46A PQFN |
|
DMT3006LFVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
HUFA76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
UJ3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
|
RM3N700S4Rectron USA |
MOSFET N-CHANNEL 700V 3A SOT223 |