English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.8mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 6.9 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta), 115W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NX3008NBKW,115Nexperia |
MOSFET N-CH 30V 350MA SOT323 |
|
DMPH4023SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 50A TO252 T&R |
|
IPL65R210CFDAUMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 16.6A 4VSON |
|
STS7P4LLF6STMicroelectronics |
MOSFET P-CH 40V 7A POWER8-SO |
|
IRLR7821TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 65A DPAK |
|
MSC060SMA070SRoving Networks / Microchip Technology |
SICFET N-CH 700V 37A D3PAK |
|
IPD60R450E6ATMA1Rochester Electronics |
MOSFET N-CH 600V 9.2A TO252-3 |
|
STP11NM60STMicroelectronics |
MOSFET N-CH 650V 11A TO220AB |
|
AO3402Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3L |
|
RSF010P03TLROHM Semiconductor |
MOSFET P-CH 30V 1A TUMT3 |
|
IPW65R280E6Rochester Electronics |
650 V COOLMOS E6 POWER MOSFET |
|
CSD19533Q5ATTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
SCT3030KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 72A TO247N |
