







MOSFET N-CH 60V 350MA TO236AB
POT 500K OHM 1W PLASTIC LINEAR
MEMORY CARD CFAST 32GB
IC RF TXRX+MCU 802.15.4 72VFBGA
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 350mA (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 1.6Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.6 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 50 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 370mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-236AB |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
TPH3202LSTransphorm |
GANFET N-CH 600V 9A 3PQFN |
|
|
PMZB950UPE315Rochester Electronics |
P-CHANNEL MOSFET |
|
|
TK10A80W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 9.5A TO220SIS |
|
|
C2M0080120DWolfspeed - a Cree company |
SICFET N-CH 1200V 36A TO247-3 |
|
|
PMT200EPEA115Rochester Electronics |
P-CHANNEL MOSFET |
|
|
FQB3P20TMRochester Electronics |
MOSFET P-CH 200V 2.8A D2PAK |
|
|
XP152A11E5MR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 700MA SOT23 |
|
|
STL38N65M5STMicroelectronics |
MOSFET N-CH 650V PWRFLAT HV |
|
|
FQD5N20LTFRochester Electronics |
MOSFET N-CH 200V 3.8A DPAK |
|
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |