English
简体中文
MOSFET N-CH 200V 3.8A DPAK
IC PWR RELAY N-CHAN 1:1 16SO
TURBO PANEL MOUNT CHIME ALARM
THERMOCOUPLE J 4 COND 28AWG 3'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 1.9A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.2 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 325 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 37W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |
|
SUG80050E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 100A TO247AC |
|
NTP22N06LRochester Electronics |
MOSFET N-CH 60V 22A TO220AB |
|
IMW65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFS3004TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
SQJ431EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
NTHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |
|
TK40A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220SIS |
|
TK100A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220SIS |
|
STB24N60M6STMicroelectronics |
MOSFET N-CH 600V D2PAK |