English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FDmesh™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24.5 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 845 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 109W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTJD4105CT1GRochester Electronics |
MOSFET 20V 0.63A SC-88 |
|
MIC94053BC6Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRLML2803TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 1.2A SOT23 |
|
APT20M18B2VFRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
NX138BKMYLNexperia |
MOSFET N-CH 60V 380MA DFN1006-3 |
|
RQ3E110AJTBROHM Semiconductor |
MOSFET N-CH 30V 11A/24A 8HSMT |
|
FQP65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 65A TO220-3 |
|
IRFF223Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF6N60ZUTRochester Electronics |
MOSFET N-CH 600V 4.5A TO220F |
|
TK16E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
SIR404DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 60A PPAK SO-8 |
|
DMTH6010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.5A PWRDI5060 |
|
IRL2910PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 55A TO220AB |
