English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 350 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120mA (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 0V |
| rds on (max) @ id, vgs: | 25Ohm @ 120mA, 0V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 300 pF @ 25 V |
| 场效应管特征: | Depletion Mode |
| 功耗（最大值）: | 1W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92 (TO-226) |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS5C423NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 150A 5DFN |
|
STP15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 11A TO220 |
|
NTB082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A D2PAK |
|
APT34M120JRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 35A SOT227 |
|
IRF6617TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A DIRECTFET |
|
IRFBG20PBFVishay / Siliconix |
MOSFET N-CH 1000V 1.4A TO220AB |
|
IXFN20N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 20A SOT-227B |
|
SPD06N60C3ATMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
SUD70090E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 50A TO252 |
|
ISL9N312AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3662Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.9A/49A 8PQFN |
|
IRFS750ARochester Electronics |
MOSFET N-CH 400V 8.4A TO220F |
|
SQS482ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8W |
