English
简体中文
CAP FILM 1UF 5% 63VDC 2824
MOSFET N-CH 600V 44A TO247
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 124 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 4285 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 330W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPW80R290C3AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
SPP11N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
TSM2306CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 3.5A SOT23 |
|
NP180N04TUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 180A TO263-7 |
|
NTD85N02R-1GRochester Electronics |
MOSFET N-CH 24V 12A/85A IPAK |
|
TSM090N03CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 50A TO252 |
|
SIHB22N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 22A D2PAK |
|
IPI80N04S3-04Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOTF4N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 4A TO220F |
|
2SK3659-AZRochester Electronics |
MOSFET N-CH 20V 65A TO220-3 |
|
DN3535N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 230MA TO243AA |
|
SIHFR9120-GE3Vishay / Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
|
IRF6794MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 32A DIRECTFET |