类型 | 描述 |
---|---|
系列: | U-MOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 11.2mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 156 nC @ 10 V |
vgs (最大值): | +10V, -20V |
输入电容 (ciss) (max) @ vds: | 7760 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 100W (Tc) |
工作温度: | 175°C |
安装类型: | Surface Mount |
供应商设备包: | DPAK+ |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF6619TR1IR (Infineon Technologies) |
MOSFET N-CH 20V 30A DIRECTFET |
|
BSC074N15NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 114A TSON-8-3 |
|
SQ2348ES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 30V 8A SOT23-3 |
|
AOW15S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 15A TO262 |
|
IPI65R110CFDXKSA1Rochester Electronics |
MOSFET N-CH 650V 31.2A TO262-3 |
|
IPA65R150CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO220 |
|
FDN336PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.3A SUPERSOT3 |
|
MCH6337-TL-WRochester Electronics |
MOSFET P-CH 20V 4.5A 6MCPH |
|
PSMN5R6-100BS,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
FDMS86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/22A 8PQFN |
|
STB13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
|
TJ40S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 40A DPAK |
|
SIHB30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A D2PAK |