类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 8.4A (Ta), 68A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.4 pF @ 24 V |
场效应管特征: | - |
功耗(最大值): | 1.04W (Ta), 75W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP2N95K5STMicroelectronics |
MOSFET N-CH 950V 2A TO220 |
|
FDD5N60NZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4A DPAK |
|
AOB11S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
TPHR9203PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 150A 8SOP |
|
NTMFS4935NBT1GRochester Electronics |
MOSFET N-CH 30V 13A/93A 5DFN |
|
SIS780DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A PPAK1212-8 |
|
NTMFS4927NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
AOB27S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 27A TO263 |
|
IPP120N10S405AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
DMN1019UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 10.7A TSOT26 |
|
TK35A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 35A TO220SIS |
|
STP42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
IRFR1N60APBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |