类型 | 描述 |
---|---|
系列: | * |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPSA70R1K4P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
FDMC8321LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/49A POWER33 |
|
DMN3009SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A 8SO T&R 2 |
|
IRFR9210TRLPBFVishay / Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
|
IRFR214TRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
IPD95R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 9A TO252-3 |
|
FDS6670ASRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
CSD16406Q3Texas Instruments |
MOSFET N-CH 25V 19A/60A 8VSON |
|
AO3434AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3L |
|
IXFR180N15PWickmann / Littelfuse |
MOSFET N-CH 150V 100A ISOPLUS247 |
|
IPD640N06LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 18A TO252-3 |
|
TK1K2A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6A TO220SIS |
|
STB60NF10-1STMicroelectronics |
MOSFET N-CH 100V 80A I2PAK |