类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 28A (Ta), 150A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2V @ 135µA |
栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3600 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.7W (Ta), 110W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD30N06S2L-23Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
STP11N65M5STMicroelectronics |
MOSFET N-CH 650V 9A TO220 |
|
FQP6N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO220-3 |
|
NDD05N50ZT4GRochester Electronics |
MOSFET N-CH 500V 4.7A DPAK |
|
BSH111BKRNexperia |
MOSFET N-CH 55V 210MA TO236AB |
|
DMP3028LFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 6.8A 6UDFN |
|
DMT10H009LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 13A/48A 8SO T&R |
|
IRFZ10PBFVishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
SI2365EDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.9A TO236 |
|
IPB600N25N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 25A D2PAK |
|
2SK1447LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
CSD18535KTTTexas Instruments |
MOSFET N-CH 60V 200A DDPAK |
|
IPP80N04S306AKSA1Rochester Electronics |
MOSFET N-CH 40V 80A TO220-3 |