类型 | 描述 |
---|---|
系列: | SuperMESH™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2Ohm @ 2A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 26 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 510 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 70W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF2804STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
STP26N60DM6STMicroelectronics |
MOSFET N-CH 600V 18A TO220 |
|
APT5010JVRU3Roving Networks / Microchip Technology |
MOSFET N-CH 500V 44A SOT227 |
|
FDP8870-F085Rochester Electronics |
MOSFET N-CH 30V 19A/156A TO220-3 |
|
R8002ANJFRGTLROHM Semiconductor |
MOSFET N-CH 800V 2A LPTS |
|
2SK3709Rochester Electronics |
MOSFET N-CH 100V 37A TO220ML |
|
SI8805EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 8V 4MICROFOOT |
|
DMTH10H010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
|
IPD90N06S4L-05Rochester Electronics |
IPD90N06 - 55V-60V N-CHANNEL AUT |
|
RJK03B7DPA-00#J5ARochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
IPB180N10S403ATMA1Rochester Electronics |
MOSFET N-CH 100V 180A TO263-7-3 |
|
IXTT110N10PWickmann / Littelfuse |
MOSFET N-CH 100V 110A TO268 |
|
IPB014N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 34A/180A TO263-7 |