类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 20mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 80W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-251 |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN2R5-60PLQNexperia |
MOSFET N-CH 60V 150A TO220AB |
|
RSQ035P03TRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
|
SI4116DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 18A 8SO |
|
AUIRLR024ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
SIHF15N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 15A TO220 |
|
TPH3R506PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 94A 8SOP |
|
RFP45N06_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI1010NPBF-IRRochester Electronics |
HEXFET POWER MOSFET |
|
SUD50N024-09P-E3Vishay / Siliconix |
MOSFET N-CH 22V 49A TO252 |
|
NTTFS015N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 9.4A/27A 8WDFN |
|
APT84M50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 84A T-MAX |
|
TK8A10K3,S5QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 8A TO220SIS |
|
IRF7606TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A MICRO8 |