THICKFILM RESISTOR 0805
MOSFET N-CH 200V 10A TO252
RX TXRX MODULE CELL 4G LTE SMD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 182mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 5.25V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 85W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FCD7N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
|
DMP3013SFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 12A PWRDI3333 |
|
FDMC86244Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 2.8A/9.4A 8MLP |
|
IXTH10P60Wickmann / Littelfuse |
MOSFET P-CH 600V 10A TO247 |
|
STB13N80K5STMicroelectronics |
MOSFET N-CH 800V 12A D2PAK |
|
AOV20S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 3.6A/18A 4DFN |
|
APT34F60S/TRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |
|
STD4NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 3A IPAK |
|
AOI7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO251A |
|
SKI03087Sanken Electric Co., Ltd. |
MOSFET N-CH 30V 40A TO263 |
|
SQS423EN-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 16A POWERPAK1212 |
|
APT9M100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 9A TO247 |
|
CDM3-800 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 800V 3A DPAK |