English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 280mOhm @ 960mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 570 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 4-DIP, Hexdip, HVMDIP |
| 包/箱: | 4-DIP (0.300", 7.62mm) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STW34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO247 |
|
IRFR210PBFVishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
IRF9Z24STRLPBFVishay / Siliconix |
MOSFET P-CH 60V 11A D2PAK |
|
ZVN4310GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.67A SOT223 |
|
MCH3382-TL-WRochester Electronics |
MOSFET P-CH 12V 2A SC70FL/MCPH3 |
|
FCH150N65F-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A TO247 |
|
FDW262PRochester Electronics |
MOSFET P-CH 20V 4.5A 8TSSOP |
|
TSM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFN |
|
XPH4R714MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A 8SOP |
|
FDS8672SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
FQI12N60TURochester Electronics |
MOSFET N-CH 600V 10.5A I2PAK |
|
DMT3009UFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.6A/30A PWRDI |
|
SSS10N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
