类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD046N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
FQPF17P06Rochester Electronics |
MOSFET P-CH 60V 12A TO220F |
|
NTJS4151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.3A SC88/SC70-6 |
|
FCH070N60ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 52A TO247 |
|
IPD90P03P4L04ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-3 |
|
DMP3008SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.6A PWRDI3333-8 |
|
IXTA50N20PWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
FDB4020PRochester Electronics |
MOSFET P-CH 20V 16A TO263AB |
|
IPP60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
3N164 DIELinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |
|
RJU003N03T106ROHM Semiconductor |
MOSFET N-CH 30V 300MA UMT3 |
|
SI1469DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
|
FDMS8670Rochester Electronics |
MOSFET N-CH 30V 24A/42A 8PQFN |