类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQPF5N50CYDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F-3 |
|
IRFS4510TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 61A D2PAK |
|
NTD95N02R-001Rochester Electronics |
MOSFET N-CH 24V 12A/32A IPAK |
|
NTD4809NA-1GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
FDP045N10ARochester Electronics |
120A, 100V, 0.0045OHM, N CHANNEL |
|
SIRA00DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
BSL716SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 75V 2.5A TSOP6-6 |
|
SIR870BDP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK |
|
RFD14N05LSM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
|
AON6240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 27A/85A 8DFN |
|
IXFB210N20PWickmann / Littelfuse |
MOSFET N-CH 200V 210A PLUS264 |
|
FCP7N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A TO220-3 |
|
STH13N120K5-2AGSTMicroelectronics |
MOSFET N-CH 1200V 12A H2PAK-2 |