English
简体中文
RES 97.6K OHM 0.5% 1/20W 0201
CRYSTAL 40.0000MHZ 8PF SMD
MOSFET N-CHANNEL 30V 85A 8DFN
IC BATT MON MULT-CHEM 1C SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4345 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 187W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLI630GPBFVishay / Siliconix |
MOSFET N-CH 200V 6.2A TO220-3 |
|
IRF1405STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 131A D2PAK |
|
DMN2020LSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.9A SC59-3 |
|
DMTH62M8LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060-8 |
|
NX3020NAKW,115Nexperia |
MOSFET N-CH 30V 180MA SOT323 |
|
IPD80R3K3P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.9A TO252-3 |
|
RUR040N02TLROHM Semiconductor |
MOSFET N-CH 20V 4A TSMT3 |
|
IRFL9110TRPBFVishay / Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
|
SI2329DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 6A SOT23-3 |
|
TK40E06N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220 |
|
BSC105N10LSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 11.4/90A 8TDSON |
|
NTMFS4852NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 16A/155A 5DFN |
|
NTD5867NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |